Novel Approach for implementation BISR (Built In Self Repair) With Redundancies in a System On-Chip For SRAMS

  • Unique Paper ID: 144657
  • Volume: 4
  • Issue: 1
  • PageNo: 304-307
  • Abstract:
  • Therefore, we implemented an MBISR generator called BRAINS+, which automatically generates register transfer level MBISR circuits for SoC designers. The MBISR circuit is based on a redundancy analysis (RA) algorithm that enhances the essential spare pivoting algorithm, with a more flexible spare architecture, which can configure the same spare to a row, a column, or a rectangle to fit failure patterns more efficiently. The proposed MBISR circuit is small, and it supports at-speed test without timing-penalty during normal operation, e.g., with a typical 0.13μm complementary metal- oxide-semiconductor technology, it can run at 333 MHz for a 512 Kb memory with four spare elements (rows and/or columns), and the MBISR area overhead is only 0.36%. With its low area overhead and zero test-time penalty, the MBISR can easily be applied to multiple memories with a distributed RA scheme. Compared with recent studies, the proposed scheme is better in not only test-time but also area overhead.
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