Author Login IJIRT Partner Network (IPN) Login

Effect of impurities on the nanostructure formation on Ge(100) substrate by 26 keV ion implantation

  • Unique Paper ID: 166600
  • Volume: 10
  • Issue: 3
  • PageNo: 653-658
  • Abstract:
  • In this study a comparison of the 26 keV Si^- and Au^- ion implantation on Ge (100) substrate at room temperature for the ion fluence of 1×10^18 ions/cm^2. The study demonstrates that the implantation of Si ions at near normal incidence results in the formation of pit structures on the Ge substrate, whereas the implantation of Au ions produces dot structures. Au ion bombardment can produce a grating-like rippled surface that is highly ordered at an off-normal angle of 60°; however, Si^- ions do not exhibit any such ordered ripples. Au ion bombardment can generate beautiful highly ordered grating-like rippled surface but no such ordered ripples are found for Si^- ions. A subsequent investigation was conducted by incorporating silver atoms into the Si^- ion bombardment of the Ge substrate. The nanostructuring process is improved by the introduction of Ag atoms during the Si^- ion bombardment of the Ge substrate.
email to a friend

Cite This Article

  • ISSN: 2349-6002
  • Volume: 10
  • Issue: 3
  • PageNo: 653-658

Effect of impurities on the nanostructure formation on Ge(100) substrate by 26 keV ion implantation

Related Articles

Impact Factor
8.01 (Year 2024)
UGC Approved
Journal no 47859

Join Our IPN

IJIRT Partner Network

Submit your research paper and those of your network (friends, colleagues, or peers) through your IPN account, and receive 800 INR for each paper that gets published.

Join Now

Latest Publication

Archive

View More

Recent Conferences

NCSEM 2024

National Conference on Sustainable Engineering and Management - 2024 Last Date: 15th March 2024

Submit inquiry